Dual-mode operation of 2D material-base hot electron transistors

Dual-mode operation of 2D material-base hot electron transistors

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary ...

High-Current Gain Two-Dimensional MoS₂-Base Hot-Electron Transistors.

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electro...

Graphene Hot-electron Transistors

Hot-Electron Degradation of Bipolar Transistors

Hot-electron degradation of a bipolar transistor occurs when the transistor's emitterbase junction is reverse biased. Hot carriers generated by high electric fields in this junction create interface states and other defects that degrade a transistor's forwardbias current gain. This thesis aims to give the most precise microscopic description to date of reverse-bias stress of bipolar transistors...

Vertical graphene-base hot-electron transistor.

We demonstrate vertical graphene-base hot-electron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on-off ratio (>10(5)), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a built-in energy barrier. The influences of...